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APT39F60J
600V, 42A, 0.11 Max trr 290ns
N-Channel FREDFET
Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
S G D
S
SO
2 T-
27
"UL Recognized"
ISOTOP (R)
file # E145592
APT39F60J Single die FREDFET
G
D
S
FEATURES
* Fast switching with low EMI * Low trr for high reliability * Ultra low Crss for improved noise immunity * Low gate charge * Avalanche energy rated * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * PFC and other boost converter * Buck converter * Single and two switch forward * Flyback
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 42 26 210 30 1580 28
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ,TSTG VIsolation WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight 29.2 Torque 10 Terminals and Mounting Screws. 1.1 MicrosemiWebsite-http://www.microsemi.com -55 2500 1.03 0.15 150 C V oz g in*lbf N*m
04-2009 050-8155 Rev C
Min
Typ
Max 480 0.26
Unit W C/W
Static Characteristics
Symbol
VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS
TJ = 25C unless otherwise specified
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 28A VGS = VDS, ID = 2.5mA VDS = 600V VGS = 0V TJ = 25C TJ = 125C
APT39F60J
Typ 0.57 0.09 4 -10 Max Unit V V/C V mV/C A nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 600
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
2.5
0.11 5 250 1000 100
VGS = 30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ = 25C unless otherwise specified
Test Conditions
VDS = 50V, ID = 28A VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related
Min
Typ 55 11300 115 1040 550
Max
Unit S
pF
VGS = 0V, VDS = 0V to 400V
5
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 28A, VDS = 300V Resistive Switching VDD = 400V, ID = 28A RG = 2.2 6 , VGG = 15V
285 280 60 120 65 75 190 60
nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr Irrm dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
Min
D
Typ
Max 42
Unit
G S
A 210 1.0 290 540 V ns C A 20 V/ns
ISD = 28A, TJ = 25C, VGS = 0V TJ = 25C TJ = 125C ISD = 28A 3 diSD/dt = 100A/s VDD = 100V TJ = 25C TJ = 125C TJ = 25C TJ = 125C ISD 28A, di/dt 1000A/s, VDD = 400V, TJ = 125C
255 450 1.41 3.66 10.7 15.8
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 4.03mH, RG = 25, IAS = 28A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%.
04-2009 Rev C
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -1.10E-7/VDS^2 + 4.60E-8/VDS + 1.72E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
050-8155
APT39F60J
250
V
GS
90
= 10V T = 125C
J
80
V
200 ID, DRAIN CURRENT (A)
GS
= 7&8V
ID, DRIAN CURRENT (A)
TJ = -55C
70 60 50 40 30 20 10 0 0
5V 4.5V 5.5V 6V
150
TJ = 25C
100
50
TJ = 150C TJ = 125C
0
0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics
5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
3.0
NORMALIZED TO VGS = 10V @ 28A
200
VDS> ID(ON) x RDS(ON) MAX.
180 160 ID, DRAIN CURRENT (A) 140 120 100 80 60 40 20
2.5
250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
2.0
1.5
TJ = -55C TJ = 25C TJ = 125C
1.0
0.5 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 3, RDS(ON) vs Junction Temperature 100
TJ = -55C TJ = 25C TJ = 125C
0
0
1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics Ciss
20,000 10,000
gfs, TRANSCONDUCTANCE
80
C, CAPACITANCE (pF)
60
1000 Coss 100 Crss
40
20
0
0
10
20 30 40 50 60 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current
70
10
100 200 300 400 500 600 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage
0
16 VGS, GATE-TO-SOURCE VOLTAGE (V) 14 12
ID = 28A
200 ISD, REVERSE DRAIN CURRENT (A) 180 160 140 120 100 80 60 40 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 0 0
TJ = 150C TJ = 25C
VDS = 120V
10
VDS = 300V
8 6 4 2 50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0 0
VDS = 480V
050-8155
Rev C
04-2009
APT39F60J
250 100 ID, DRAIN CURRENT (A)
IDM
250 100 ID, DRAIN CURRENT (A)
IDM
10
13s 100s 1ms 10ms 100ms DC line TJ = 125C TC = 75C
10
13s 100s Rds(on) 1ms 10ms 100ms DC line
Rds(on)
1
1
TJ = 150C TC = 25C
Scaling for Different Case & Junction Temperatures: ID = ID(T = 25C)*(TJ - TC)/125
0.1
1
10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area
0.1
C
10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area
1
0.30
ZJC, THERMAL IMPEDANCE (C/W)
0.25
D = 0.9
0.20
0.7
0.15
0.5
Note:
PDM
t1 t2
0.10
0.3 0.1 0.05 SINGLE PULSE 10-4
t1 = Pulse Duration
0.05
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
0
10-5
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
1.0
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)
04-2009
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal.
Rev C
* Source Dimensions in Millimeters and (Inches)
Gate
050-8155
ISOTOP(R) is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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